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The piezoresistive effect of semiconductor materials can be several orders of magnitudes larger than the geometrical effect and is present in materials like germanium, polycrystalline silicon, amorphous silicon, silicon carbide, and single crystal silicon. Hence, semiconductor strain gauges with a very high coefficient of sensitivity can be built. For precision measurements they are more difficult to handle than metal strain gauges, because semiconductor strain gauges are generally more sensitive to environmental conditions (esp. temperature).

The piezoresistive effect of semiconductors has been used for sensor devices employing all kinds of semiconductor materials such as germanium, polycrystalline silicon, amorphous silicon, and single crystal silicon. Since silicon is today the material of choice for integrated digital and analog circuits the use of piezoresistive silicon devices has been of great interest. It enables the easy integration of stress sensors with Bipolar and CMOS circuits.

(en.wikipedia.org/wiki/Piezoresistive_effect)

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from Electrochemical, photoresistive and photomagnetic properties of semiconductors, released July 29, 2014

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